PART |
Description |
Maker |
2SK3305 |
Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A)
|
TY Semiconductor Co., L...
|
2SK3116 |
Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) N-Channel MOSFET
|
TY Semiconductor Co., L... TY Semicondutor
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STP35NF10 STB35NF10 STB35NF10T4 |
N-CHANNEL 100V 0.030 OHM 40A TO-220/D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET?/a> POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET POWER MOSFET N-CHANNEL 100V - 0.030OHM - 40A TO-220 / D2PAK LOW GATE CHARGE STRIPFET⒙ POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFETPOWER MOSFET N沟道100V 0.030ohm - 40A 220 / D2PAK封装,低栅极电荷STripFET⑩功率MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
STS8DNF3LL |
DUAL N-CHANNEL 30V - 0.017 OHM - 8A SO-8 LOW GATE CHARGE STRIPFET II POWER MOSFET DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFETII POWER MOSFET 双N沟道30V 0.017欧姆- 8A条的SO - 8低栅极电荷STripFET⑩二功率MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
STW9NK95Z |
Gate charge minimized N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
|
STMicroelectronics ST Microelectronics
|
STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N-CHANNEL Power MOSFET
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances From old datasheet system N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation] IXYS, Corp.
|
STL55NH3LL |
N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET N-channel 30 V, 0.0079 ヘ, 15 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器 MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
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Semikron International
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